Abstract
Based on measurements of infrared Fourier spectroscopy, Hall effect, and the tensor Hall-effect, we have established the nature, and determined the concentration, of the main types of radiation defects in the single crystals n-Si , irradiated by different fluxes of electrons with an energy of 12 MeV. It is shown that for the examined silicon single crystals at electronic irradiation, it is quite effective to form a new type of radiation defects belonging to the VO i P complexes (A-center, modified with an additive of phosphorus). Based on the solutions to electroneutrality equation, we have derived dependences of activation energy for the deep level E 1 =E C –0,107 eV, which belongs to the VO i P complex, on uniaxial pressure along the crystallographic directions [100] and [111]. By using a method of least squares, we have constructed approximation polynomials for calculating these dependences. At orientation of the deformation axis along the crystallographic direction [100], the deep level E 1 =E C –0.107 eV will be decomposed into two components with a different activation energy. This explains the nonlinear dependences of activation energy of the deep level E 1 =E C –0.107 eV on the uniaxial pressure P≤0.4 GPa. For pressures P>0.4 GPa, the decomposition of this deep level is significant and one can assume that the deep level of the VO i P complex will interact only with two minima in the silicon conduction zone while a change in the magnitude of activation energy would be linear for deformation. For the case of uniaxial pressure P≤0.4 GPa along the crystallographic direction [111] a change in the activation energy for the VO i P complex is described by a quadratic dependence. Accordingly, the offset in the deep level E 1 =E C –0.107 eV for a given case is also a quadratic function for deformation. Different dependences of activation energy of the VO i P complex on the orientation of a deformation axis relative to different crystallographic directions may indicate the anisotropic characteristics of this defect. The established features in defect formation for the n-Si single crystals, irradiated by electrons, could be applied when designing various instruments for functional electronics based on these single crystals
Highlights
Penetrating radiation is currently widely employed in various fields of science and technology and in many cases can act as an effective technological tool [1]
It is shown by employing additional measurements of the Hall effect and the tensor hall-effect that for the examined silicon single crystals at electron irradiation it is fairly effective to form a new type of radiation defects, which belong to the VOiP complexes (A-center, modified with a phosphorus additive)
An analysis of the performed theoretical calculations reveals that the concentration of these complexes for the irradiated silicon single crystals is the largest relative to the concentration of the VOi and CiOi complexes
Summary
Penetrating radiation is currently widely employed in various fields of science and technology and in many cases can act as an effective technological tool [1]. The use of radiation exposure in order to modify the properties of silicon and to obtain, based on it, the fundamentally new elements for functional electronics necessitates thorough studies into processes of defect formation. It is a relevant task to investigate this direction, as the results to be obtained could be useful both for scientists and engineers who work in the field of semiconductor materials science. Undertaking such a research is important both in terms of scientific and applied significance when developing the fundamentals for the new radiation technologies of semiconductors and while studying the impact of irradiation on various devices in silicon electronics
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