Abstract
The electrical characteristics of p-type Cd1−xZnxTe (x=0.05) and Cd1−xMnxTe (x=0.04) single crystals with a resistivity of 103–1010 Ω cm at 300 K are studied. The conductivity and its variation with temperature are interpreted on the basis of statistics of electrons and holes in a semiconductor with deep acceptor impurities (defects), with regard to their compensation by donors. The depth of acceptor levels and the degree of their compensation are determined. The problems of attaining near intrinsic conductivity close to intrinsic are discussed.
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