Abstract
Chemical etching of Cd1 − xMnxTe (0.04 < x < 0.5) solid solution (ss) single crystals in I2 + CH3OH etching mixtures was studied. Concentration and kinetic curves of etching rates were plotted. As the manganese concentration of the solid solution increases, the rates of their etching by iodine-methanol etchants increase, too. The etchant compositions and chemical-dynamic polishing protocols for Cd1 − xMnxTe single crystals were optimized.
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