Specific features of 2D electron distribution over the subbands of the quantum well of a single heavily doped heterojunction

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The electron distribution over the quantum confinement subbands (Em is the ground-state subband and Ep is the excited subband) in the quantum well of a heavily doped heterojunction is discussed. The functional relation between the concentrations nm and np in the Em and Ep subbands, as well as the threshold value nc, agrees with the theory only qualitatively. This fact can be due to the existence of the density-of-states tails and to the quasi-two-dimensionality of the electrons in the Ep subband. The measured nonzero concentration np in the subthreshold region nm < nc is explained by the effect of pushing the np electrons to the heterojunction plane by the internal electric field.