Abstract
We analyzed GaInN/GaN quantum well structures with time-resolved and temperature dependent photoluminescence (TRPL) and excitation power and temperature dependent photoluminescence. For samples with high internal quantum efficiency we observed the appearance of a second, well separated emission line on the high energy side of the main emission. TRPL measurements show differences in photoluminescence decay dynamics for both emissions. The decay behaviour seems to be influenced by carrier transport from regions contributing to the high energy emission to regions contributing to the main emission. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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