Abstract
Specific contact resistivities of the Al/TiW/TiSi 2 /Si system are characterized. It is found that without a TiW barrier layer, Al can penetrate through the TiSi 2 layer and significantly affect the TiSi 2 /Si interfacial contact resistance. Intrinsic TiSi 2 contact resistivities to n+and p+silicon are characterized with a TiW barrier between the silicide and the aluminum. TiSi 2 contact resistivity to n+silicon is found to be about one order of magnitude lower than that of Al to n+silicon. However, TiSi 2 to p+silicon contact resistivity is higher than that of Al to p+silicon and is very sensitive to the boron implant dose.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
