Abstract
The specific contact resistance at zero bias, R c , serves as a measure of the ohmic or rectifying behavior of a metal-semiconductor barrier under operating conditions. It is thus an important design parameter for semiconductor devices. The values of R c have been calculated for Metal-Si and metal-GaAs barriers on p-type and n-type samples. The theoretical calculation is based on the generalized transport study of metal-semiconductor systems. The results, which are presented graphically, show the dependence of R c on temperature over the range 50°K–500°K, the barrier height from 0.2 to 1.0 eV, and the ionized impurity concentration from 10 14 to 10 21 cm −3. Generally R c decreases exponentially with increasing temperature and with decreasing barrier height. For samples with lower dopings where the thermionic emission dominates, R c is essentially independent of doping; for higher dopings where the tunneling dominates, R c decreases rapidly with increasing doping. The experimental results of R c for various metals on silicon samples are in good agreement with the predictions.
Published Version
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