Abstract
Since the end of the 80’s, SO1 developments in general have raised an increased interest due to the material commercial availability. For the first time the possibility to use SO1 wafers, with specifications close to the silicon wafers, has been offered by the technology using oxygen implantation (SIMOX) to perform the silicon on insulator structure. SIMOX technology provides a wide range of silicon film thicknesses (30 nm to several microns by using epitaxial techniques) on top of buried oxide BOX with a maximum thickness of 500 nm (typically two standards seem to emerge : 400 nm and 80 nm). SIMOX is the best suited material to applications requiring thin silicon films and BOX with good uniformity. It is used in production for SRAM and CMOS digital circuits.
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