Abstract
International Journal of RF and Microwave Computer-Aided EngineeringVolume 28, Issue 8 e21540 SPECIAL ISSUE: GaN HEMT MODELING AND CIRCUITS Special issue on GaN HEMT modeling and circuits Prof. Wenhua Chen, Prof. Wenhua ChenSearch for more papers by this authorProf. Karun Rawat, Prof. Karun RawatSearch for more papers by this authorDr. Rui Ma, Dr. Rui MaSearch for more papers by this author Prof. Wenhua Chen, Prof. Wenhua ChenSearch for more papers by this authorProf. Karun Rawat, Prof. Karun RawatSearch for more papers by this authorDr. Rui Ma, Dr. Rui MaSearch for more papers by this author First published: 19 September 2018 https://doi.org/10.1002/mmce.21540Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat No abstract is available for this article. Volume28, Issue8Special Issue: GaN HEMT Modeling and CircuitsOctober 2018e21540 RelatedInformation
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