Abstract
Nb-doped semiconductive SrTiO3 film and Bi and Nb co-added SrTiO3 film were grown on (001) MgO substrates by metal-organic chemical vapor deposition (MOCVD). The (001)-oriented SrTiO3 phase was grown epitaxially with cube-on-cube structure in relation to the MgO substrate. In the case of the Nb-doped SrTiO3 film, the film exhibited a semiconductive nature with a low electrical resistivity (0.11Ω·cm) that is three orders of magnitude lower than that in bulk SrTiO3 ceramics by adding a much higher Nb addition (1.6-3.5mol%). Most of the added Nb is thought to substitute for the Ti4+ as valence 4+, as suggested by the dependency of the cell volume change. In the case of Bi and Nb co-added SrTiO3 film, the lattice parameter was somewhat increased with the addition of Bi, but the amount of Bi was undetectable. The addition of Bi did not produce a thin film with nonlinear electrical resistivity. Introducing a SrO seed layer with -2nm thickness onto (001) MgO substrate produced weak nonlinear I-V (varistor) properties. It might be thought that the grain boundary between the two kinds of in-plane oriented grains, i.e., 45° rotating and cube-on-cube grains, acts as a barrier against varistor characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
