Special Issue Ceramics Integration. Comparative Study of Electrical Properties of Several(Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Composite Thin Films Prepared by a Chemical Solution Deposition Method.

Abstract

Several (Bi, La) 4 Ti 3 O 12 /Pb (Zr, Ti)O 3 composite thin films, including a sandwich structure (Bi, La) 4 Ti 3 O 12 / Pb (Zr, Ti)O 3 / (Bi, La) 4 Ti 3 O 12 , a multilayer structure (Bi, La) 4 Ti 3 O 12 /Pb (Zr, Ti)O 3 /LaNiO 3 , and two bilayer structures of (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 and Pb(Zr,Ti)O 3 /(Bi,La) 4 Ti 3 O 12 , were fabricated on Pt/Ti/ SiO 2 /Si substrates. Both (Bi, La) 4 Ti 3 O 12 and Pb (Zr, Ti)O 3 layers were prepared by a chemical solution deposition technique. The electrical properties of the composite films are affected not only by the stacking configuration of the composite films but also by the electrical properties of individual layer in the composite films. The experiments demonstrated that the (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 / (Bi, La) 4 Ti 3 O 12 sandwich structure and the (Bi, La) 4 Ti 3 O 12 /Pb(Zr, Ti)O 3 /LaNiO 3 multilayer structure showed fatigue-free characteristics at least up to 10 10 switching bipolar pulse cycles and excellent retention properties. The room-temperature dielectric constants of all composite thin films ranged between 200 and 300, at a frequency of 100 kHz.