Abstract
The electrical characteristics of CdTe-based Schottky-diode detectors of X-ray and γ radiation are studied. Experimental data are obtained for Al/p-CdTe diodes with a substrate resistivity from 102 to 109 Ωcm (300 K). The obtained results are interpreted in the context of the Sah-Noyce-Shockley theory of generation-recombination, taking into account the special features of the Schottky diode. It is shown that, when semi-insulating CdTe is used, the considerable forward currents observed are caused by electron injection into the substrate.
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