Abstract

Microscopic simulations on the basis of semiconductor Maxwell-Bloch equations show that in the short-time spatio-temporal dynamics of large aspect vertical cavity surface emitting lasers (VCSEL) and coupled VCSEL-arrays microscopic and macroscopic effects are intrinsically coupled. The combination of microscopic spatial and spectral dynamics of the carrier distribution functions and the nonlinear polarization of the active semiconductor medium reveal spatio-spectral hole-burning effects as the origin of ultra-fast mode-switching effects. In coupled VCSEL-arrays the simulations predict the emergence of spontaneous ultra-fast spatial switching.

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