Abstract

In view of novel applications of ultra-high-speed vertical cavity surface emitting lasers (VCSEL) for optical interconnects and computing a microscopic theoretical model is presented which allows a general and well-founded modelling of these devices beyond the validity of conventional rate-equation approaches at ultra-fast time-scales. The model takes into account, in particular, the coupling of macroscopic device-related constraints (like the shape of the cavity) together with the ultra-fast intrinsic processes. It thereby provides the basis for the investigation and design of ultra-fast and coupled VCSELs. Simulations demonstrate the overall relevance of internal effects like the combination of microscopic spatial and spectral dynamics of the carrier distribution functions and the nonlinear polarization of the active semiconductor medium for VCSELs on short time-scales.

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