Abstract
A technique is demonstrated for dramatically reducing the amount of time required to perform spatially resolved photoluminescence measurements of peak wavelength and intensity without use of an optical multichannel analyzer. A high-resolution reference spectrum is collected at one location on the wafer and the peak wavelength and intensity are determined for that location. Comparison spectra at only 3 to 5 wavelengths are then collected at a mesh of locations across the wafer. A correlation algorithm is used to extract the peak wavelength and intensity at all of the comparison locations. Examples are provided from AlGaAs layers and from AlGaAs and InGaAs layers in pseudomorphic MODFET structures.
Published Version
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