Abstract
The interaction between a surface acoustic wave (SAW) and the excitonic photoluminescence (PL) in GaAs SAW structures is investigated. The dependence of the PL on the SAW amplitude and illumination intensity is explained by a simple model based on the field-induced ionization of the excitons and on the screening of the SAW electric field by photogenerated carriers. Microscopic PL constitutes a powerful technique for spatially resolving electric-field distributions in SAW structures.
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