Abstract
Spatially resolved optoelectronic investigation can reveal important information on charge transport and recombination in field-effect transistors (FETs) incorporating single nanowires (NWs). Scanning photocurrent microscopy (SPCM) was performed on single PbS NW FETs to extract diffusion length and lifetime of minority carriers as a function of gate voltage and excitation intensity. Interestingly, we observed a reverse of the photocurrent direction in gate-depleted PbS NW FETs under high intensity illumination. We attribute this effect to the back-gate induced carrier concentration gradient.
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