Abstract
Hydride Vapor Phase Epitaxy (HVPE) growth process is still efficient for the growth of high quality GaN material. In situ-characterization techniques are extremely difficult to implement inside HVPE hot wall reactors. A method based on selective area growth coupled to spatially resolved optical spectroscopies, micro-photoluminescence and micro-reflectivity is developed for a control of GaN optical quality and strain at different growth stages. As highly reproducible HVPE process is used with a two-step epitaxial lateral overgrowth procedure to produce 80µm thick GaN layers presenting a weak residual strain with high optical quality comparable to free-standing GaN layers.
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