Abstract
By taking advantage of how strain gradients affect spin energy levels, experiments provide a spatial map of spin coherence times of donor atoms in silicon---necessary information for many quantum-based applications.
Highlights
The technique we introduce here to spatially map coherence in near-surface ensembles is directly applicable to other spin systems of active interest, such as defects in diamond, silicon carbide, and rare earth ions in optical crystals
The electron and nuclear spins of donors in silicon are promising qubit candidates for solid-state quantum computing [1,2,3,4,5,6,7,8] because of their exceptionally long coherence times when the silicon substrate is isotopically enriched in the nuclear-spin-free isotope 28Si, reaching seconds for the donor electron spin [9,10] and minutes for its nuclear spin [5]
We quantitatively describe the spin spectra, which we show to be dominated by strain broadening specific to the sample geometry
Summary
The electron and nuclear spins of donors in silicon are promising qubit candidates for solid-state quantum computing [1,2,3,4,5,6,7,8] because of their exceptionally long coherence times when the silicon substrate is isotopically enriched in the nuclear-spin-free isotope 28Si, reaching seconds for the donor electron spin [9,10] and minutes for its nuclear spin [5]. The bismuth donor spin spectrum of a similar device was shown to be governed by the strain imparted by the differential thermal contraction of the aluminum wire with respect to the underlying silicon substrate [26,27]. We confirm these results by showing that such a model quantitatively predicts the line shape when varying the wire width (Sec. IV). We measure T2 on a magnetic-noise-insensitive clock transition, finding, again, a strong dependence on strain, with the largest measured value being T2 1⁄4 300 ms We argue that this T2 is limited by charge noise at the silicon/siliconoxide interface (Sec. VII).
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