Abstract
AbstractDopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic‐scale objects represents a new and exciting technological revolution. In this article, the use of ion‐implanted donor spins in silicon for quantum technologies is described. It is reviewed how to fabricate and operate single‐atom spin qubits in silicon, obtaining some of the most coherent solid‐state qubits, and pathways to scale up these qubits to build large quantum processors are discussed. Heavier group‐V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos, and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donor spins with industry‐standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.
Highlights
The steady miniaturization of electronic devices has naturally brought the betailored electronic properties that underpin the modern digital information havior of individual dopants into the techera
At the extreme lower end of the size scale, single dopants were among the first plausible physical systems suggested for use donors, combined with novel methods for precision placement, will allow the in quantum computing, ever since Kane integration of individual donor spins with industry-standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution
A prototypical quantum electronic device inspired by classical transistors is the gate-defined silicon MOS quantum dot,[26] whose layout and fabrication is that of a textbook-example MOSFET, augmented with two barrier gates to isolate a many-electron quantum dot
Summary
The compatibility with classical semiconductor manufacturing methods is a very appealing aspect of single donors in silicon as platforms for novel quantum technologies. A prototypical quantum electronic device inspired by classical transistors is the gate-defined silicon MOS quantum dot,[26] whose layout and fabrication is that of a textbook-example MOSFET (field-effect transistor), augmented with two barrier gates to isolate a many-electron quantum dot. This device exhibits a highly nonlinear current–voltage characteristic with the typical Coulomb conductance peaks, and can serve as a singleelectron transistor (SET) charge sensor.[27]. An integrated device architecture for control and readout of individual donors[28] comprises an SET fabricated in close proximity (at a typical distance ≈ 20 nm[29]) to a region containing the implanted donors. B0 is a static external magnetic field
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