Abstract
Experimental and theoretical studies on n -type multiple δ-doped GaAs layers are reported. Photoluminescence is measured and compared with results of self-consistent electronic-structure calculations. A series of samples with different donor concentrations in the δ-doped layer and a fixed distance between adjacent Si-doped layers (ds= 300 Å) were analysed. The PL spectra of the investigated samples do not show transitions involving confined electronic minibands. However, the full width at half maximum of the observed main emission band may be correlated with the calculated electronic miniband structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
