Abstract
Room temperature electroreflectance measurements on δ-doped low-dimensional structures are presented. Previously proposed electroreflectance bias-wavelength mapping is used for characterization of (1) a modulation Si δ-doped pseudomorphic InGaAs/GaAs quantum well and (2) a Sn δ-doped GaAs layer. An electric field above and below the δ-doping plane found from the Fourier transform applied to Franz–Keldysh oscillations was used to find the δ-dopant concentration in investigated structures. The position of the δ-doping plane and a Schottky barrier height are also determined.
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