Abstract
The heterogeneous integration of devices from multiple material platforms onto a single chip is demonstrated using a transfer-printing (TP) technique. Serial printing of devices in spatially dense arrangements requires that subsequent processes do not disturb previously printed components, even in the case where the print head is in contact with those devices. In this manuscript we show the deterministic integration of components within a footprint of the order of the device size, including AlGaAs, diamond and GaN waveguide resonators integrated onto a single chip. Serial integration of semiconductor nanowire (NW) using GaAs/AlGaAs and InP lasers is also demonstrated with device to device spacing in the 1 μm range.
Highlights
Photonic integrated circuit (PIC) technologies have matured from research devices to accessible foundry technologies over the last couple of decades [1,2,3], enabling their application in fields including telecommunications, optical signal processing and sensing [4]
In this manuscript we show the deterministic integration of components within a footprint of the order of the device size, including AlGaAs, diamond and GaN waveguide resonators integrated onto a single chip
It is clear that in order to produce future PIC systems, multiple materials are required to be integrated on a single chip to provide for the multiple optical and opto-electronic functions that cannot be optimally realized in a single monolithic platform
Summary
Photonic integrated circuit (PIC) technologies have matured from research devices to accessible foundry technologies over the last couple of decades [1,2,3], enabling their application in fields including telecommunications, optical signal processing and sensing [4]. The development of hybrid optical platforms has been advanced in recent years driven by telecommunications [9] and quantum photonic applications [10,11]. The most mature of these technologies is integration of III-V materials with silicon PICs, providing optical sources, gain and detectors on the passive silicon platform. Wafers of III-V material can be bonded onto the pre-fabricated silicon devices and post-processed to form the active optical components [12]
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