Abstract
A heterogeneous photonic integration of silicon photonic devices and III-V compound semiconductor photodetector (PD) is demonstrated by micro transfer printing (μ-TP). Via transfer printing, InP/InGaAs PIN PD is directly bonded on the top of silicon grating coupler by ultra-thin DVS-BCB adhesion layer. 0.4A/W of photo-responsibility @1550nm and ~25GHz of -3dB bandwidth are measured on printed PD. No deterioration in coupling loss is detected in the printed PD on the silicon gratings coupler with alignment accuracy of ±1μm. This technique enables a feasible route to photonic integrated circuits.
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