Abstract
Homoepitaxial diamond films prepared under low CH 4 concentration conditions (CH 4/H 2<0.15%) show atomically flat surfaces over the whole area (4×4 mm 2) of the substrate. Using these diamond films, Schottky contacts between Al and the high-conductivity layer near the surface of as-grown film have been successfully made with an excellent uniformity with ideal properties. For example, in the film grown at low CH 4 concentration of 0.016% CH 4/H 2, the ideality factor ( n value) and the barrier heights of the Schottky junctions ( φ b) were close to unity ( n<1.1) and 1.5–1.6 eV, respectively, for nearly all junctions (>42 dots) prepared on the same film. This result indicates that the quality of the films with atomically flat surfaces over the whole area of the substrate is actually excellent in a viewpoint of chemical stability as well as electrical characteristic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
