Abstract
The influence of electron scattering in the spatial resolution of X-ray microanalysis of thin foils of silicon has been measured as a function of specimen thickness and accelerating voltage. The experimental observations show that high angle elastic scattering controls the spatial resolution and that this is not influenced by the diffraction conditions. Monte Carlo calculations have also been carried out and the general form of the theoretical and experimental results are in good agreement. For foil thicknesses normally used in defect analysis in silicon, ~5000 A, the spatial resolution as measured in this experiment (taken as the region within which 90% of the X-ray signal is generated) is about 700 A at 100 kV and 1800 A at 40 kV.
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