Abstract
Cathodoluminescence scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy-type defects along the wafer diameter, which causes inhomogeneity in the emission. Dislocation density and vacancy concentration profiles have been compared.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
