Abstract
Cathodoluminescence (CL) scanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaAs:Te wafers. Dislocation density and near-band-edge CL profiles along the wafer have different shapes. Positron lifetime measurements do not show spatial changes of vacancy concentration in the wafers, but a higher vacancy concentration has been detected in the Te-doped samples relative to SI samples. Results are discussed in terms of vacancies and impurity vacancy complexes.
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