Abstract
In this paper, we show that the interface state density in the middle of the channel obtained by charge pumping measurements on small size MOS transistors are always over-estimated, because of the actual non uniform spatial distribution along the Si-SiO 2 interface. It appears to be necessary to take into account the local densities of surface states before degradation, when the charge pumping technique is used to analyse the rate of creation of new interface states in MOS transistors subjected to aging stresses. A new calculation method has been proposed which allowd the determination of surface state density in the vicinity of the drain after channel hot carrier injection.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
