Abstract
In this paper, we present our results on the distribution and generation of traps in a SiO 2/Al 2O 3 transistor. The investigation has been carried out by using charge pumping measurements, both variable voltage and frequency techniques, and constant voltage stress. By increasing the amplitude of the gate pulse we observe an increase of the charge recombined per cycle closely related to the contribution of shallow traps near the SiO 2/Al 2O 3 interface. By reducing the pulse frequency we measure an increase in the charge pumping current due to traps located deeper in the Al 2O 3. By combining charge pumping and constant voltage stress measurements, we found that the traps are mostly generated near the Si/SiO 2 interface.
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