Abstract
Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300K) photoluminescence (PL) peak wavelength increased with increasing mask-opening spacing for a constant mask-opening diameter. For 5μm diameter pyramids, peak PL wavelengths ranged from 457 to 505nm for mask opening spacings of 6 to 13μm, compared to PL peak wavelength of 420nm for a planar reference sample.
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