Abstract
An overall performance comparison analysis based on 2-D Poisson's equation solution has been presented here both for silicon-on-insulator (SOI) and silicon-on-nothing (SON) MOSFET structures. In this paper, for the first time, an idea of work function engineering with continuous horizontal mole fraction variation in a binary alloy gate has been proposed and implemented analytically to reduce rolloff in threshold voltage for SON MOSFET, thereby improving its performance over single-gate SON structures. Analytical model-based simulation verified that SON is superior over SOI MOSFET due to its higher immunity to different short-channel effects and increased current driving capability. Our results are found to be in good agreement with simulation results, thereby verifying the accuracy of the proposed analytical model.
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