Spalling Technology of PZT Thin Film Capacitor using Internal Stress

Abstract

We developed spalling technology of PZT thin film capacitors using the internal stress of the Ni film. We analyzed the normal stress of the PZT thin film capacitor using FEM and found that it ranges from 0.79 to 1.24 MPa by controlling the kind of the Ni film. The PZT thin film capacitor was successfully peeled from Si substrate when Ni-P alloy film was plated on it. It was also found that the peeled capacitor was not damaged during the peeling process by XRD analysis and electrical properties.