Abstract
Using electron time-of-flight experiments we have determined the electric field profile and the electron transport efficiency in amorphous silicon solar cells. In optimized devices we find a correlation between the space-charge distribution and the trapping behavior at the p-i junction, indicating that charged defects in the space-charge region determine both, the electric field distribution and the trapping kinetics. From their capture cross section the charged states are identified as positively charged dangling bonds.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.