Abstract
Using electron time-of-flight experiments we have determined the electric field profile and the electron transport efficiency in amorphous silicon solar cells. In optimized devices we find a correlation between the space-charge distribution and the trapping behavior at the p-i junction, indicating that charged defects in the space-charge region determine both, the electric field distribution and the trapping kinetics. From their capture cross section the charged states are identified as positively charged dangling bonds.
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