Abstract
We combined steady-state photoconductivity and laser-induced transient current measurements under above-band-gap illumination to study the space charge formation in CdZnTe. Analytical as well as numerical models describing space charge limited photocurrents were developed and an excellent agreement with measured data was obtained especially with the Drift-diffusion model. Linear rise of photocurrent at low bias was observed and ascribed to the trapping of injected holes at the region close to the cathode side. Influence of space charge formation, photoconductive gain, contribution of shallow and deep levels to photocurrent-voltage characteristics were numerically simulated. According to the measurements and calculations, recent principles used at the evaluation of detector properties, mainly the mobility-lifetime product, via the photoconductivity are critically assessed.
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