Abstract
Computer studies are carried out on the mobile space charge dependence of breakdown voltage, avalanchezone width, avalanche resonance frequency, and negative resistance of a single drift region (SDR) p+nn+ Si IMPATT diode designed for operation in the X, Ku, and K frequency bands, i.e., 8 to 26 GHz. The doping profile of the diode is optimised by varying the diffusion length, i.e., time and temperature of diffusion, so that the device may provide maximum output power and efficiency. The results show that the dc and high frequency properties of SDR Si IMPATT diodes are modified by the mobile space charge at high current density, but the space charge dependence of the above properties becomes considerable at lower dc current density for SDR diodes compared to their double drift region (DDR) counterparts.
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