Abstract
AbstractThe potency of terahertz (THz) impact ionization avalanche transit time (IMPATT) diodes based on ultra-wide bandgap semiconductor material β-Gallium oxide (Ga2O3) has been investigated here. A large signal simulation technique is considered to probe the DC and high-frequency features of single drift region (SDR) β-Ga2O3 IMPATTs formulated to operate at 0.5 THz. Simulated outcome focuses that the SDR β-Ga2O3 IMPATTs are able to deliver remarkably greater RF power as well as higher DC to RF conversion efficacy at the aforesaid frequency compared to the conventional Si and InP material-based double drift region (DDR) IMPATT sources.Keywordsβ-Ga2O3IMPATTsSDRRF output powerTHz
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