Abstract
AbstractInvestigations are carried out on the space charge dependence of the negative resistances of avalanche and drift layers of double-drift region (DDR), indium phosphide (InP) and impact ionization avalanche transit time (IMPATT) diodes at high bias current levels near avalanche frequency by using computer simulation techniques. It is observed that DDR InP diodes behave like uniformly avalanching p-i-n diodes under the above situation, and the device negative resistance degrades sharply above a bias current density of 3 × 108 A/m2.KeywordsInP IMPATTsDouble-drift IMPATT diodeW-bandp-i-n diode
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