Abstract
Numerical solutions of the (field and diffusion) transport equations yield energy and concentration contours for thick M1-I-M2 (metal-insulator-metal) barriers, and their appropriate current-voltage relationships, with and without traps. Traps must ordinarily be expected in such films, and it is shown that they result in a curvature of the barrier profile, which exercises a controlling influence over I-V characteristics in the forward direction.
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