Abstract
Charge carrier transport and accumulation in silicon carbide (SiC) wide bandgap semiconductors caused by the defect and impurity are likely to lead to serious performance degradation and failure of the semiconductor materials, and the high temperature effect makes the charge behaviors more complex. In this paper, charge carrier transport and accumulation in semi-insulating vanadium doped 4H–SiC crystal materials and the correlated temperature effect were investigated. Attempts were made to address the effect of deep trap levels on carrier transport. A combination of pulsed electro-acoustic direct space charge probing, an electrical conduction·current experiment, and x-ray diffraction measurement was employed. Space charge quantities including trap depth and trap density were extracted. The results show hetero-charge accumulation at adjacent electrode interfaces under a moderate electrical stress region (5–10 kV/mm). The charge carrier transports along the SiC bulk and is captured by the deep traps near the electrode interfaces. The deep trap energy levels originating from the vanadium dopant in SiC crystals are critical to carrier transport, providing carrier trapping sites for charges. This paper could promote the understandings of the carrier transport dynamic and trap energy level characteristic of SiC crystal materials.
Highlights
Silicon carbide (SiC) wide bandgap semiconductors have been widely used in the fields of wind power generation, photovoltaic inverters, and next-generation displays1,2 due to their high temperature, high frequency, radiation resistance, and other characteristics.3–5 They are promising for improving the efficiency of power electronic systems
From the perspective of energy band theory, defects in SiC crystal materials will result in new local energy levels in the semiconductor bandgap, which could act as donor/acceptor energy levels to release carriers or capture carriers and result in carrier localization
The present paper reports investigation of charge carrier transport and accumulation in SiC crystals under various electrical stresses and temperatures
Summary
Silicon carbide (SiC) wide bandgap semiconductors have been widely used in the fields of wind power generation, photovoltaic inverters, and next-generation displays due to their high temperature, high frequency, radiation resistance, and other characteristics. They are promising for improving the efficiency of power electronic systems. Silicon carbide (SiC) wide bandgap semiconductors have been widely used in the fields of wind power generation, photovoltaic inverters, and next-generation displays due to their high temperature, high frequency, radiation resistance, and other characteristics.. Silicon carbide (SiC) wide bandgap semiconductors have been widely used in the fields of wind power generation, photovoltaic inverters, and next-generation displays due to their high temperature, high frequency, radiation resistance, and other characteristics.3–5 They are promising for improving the efficiency of power electronic systems. From the perspective of energy band theory, defects in SiC crystal materials will result in new local energy levels in the semiconductor bandgap, which could act as donor/acceptor energy levels to release carriers or capture carriers and result in carrier localization.. Carrier transport and related chemical–physical effects, such as nonradiative energy release and small defect generation, can speed up the degradation of SiC semiconductor materials
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