Abstract
Problems associated with ion implantation into ultra-thin-film SIMOX (Separation by IMplanted OXygen) of SOI (silicon on insulator) structures are discussed. We realized n-type source/drain region with lower resistance by P+ ion implantation. To decrease the resistance of the implanted layer, the amorphized high-dose layer must be recrystallized by annealing. We show that the possibility of recrystallization can be predicted by TRIM simulation. Moreover, it was found that excess phosphorus above the solid solubility segregates in the Si/SiO2 interface.
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