Abstract

This paper summarizes recent results of the study and development of high-power nanosecond generators employing a semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on nanosecond interruption of super-density currents in semiconductor diodes (SOS-effect), are discussed. Advances with SOS-diodes, which represent new high-voltage devices for nanosecond interruption of high-density currents, are discussed. The semiconductor structure of the SOS-diodes is compared with the structure of soft- and hard-recovery high-voltage rectifier diodes. The physical processes that occur in the semiconductor structure during pumping and interruption of the current are considered. SOS-generators having the output voltage from 0.1 to 1 MV, the pulse repetition frequency from 0.1 to 5 kHz, and the average output power of units to tens of kW, are described. Application of the SOS-generators is exemplified.

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