Pulsed power technology based on semiconductor opening switches: A review.

Abstract

This paper presents a systematized review of the research on the production of nanosecond high-power pulses using solid-state generators based on an inductive energy store and a semiconductor opening switch that have been performed in the past 25 years. This research has been underway since 1992-1993 when the nanosecond cutoff of ultrahigh-density currents in semiconductor diodes was discovered and named the SOS (Semiconductor Opening Switch) effect. The discovery of the SOS effect provided a breakthrough in the development of semiconductor generators, as their most important characteristics, such as pulse power and output voltage, were increased tens and hundreds of times compared with previously known semiconductor generators. In particular, in the nanosecond semiconductor technology, megavolt voltages combined with gigawatt peak powers have been achieved. This review considers the main physical processes that determine the mechanism of operation of a SOS based on the SOS effect. The principle of operation, design, and characteristics of SOS diodes and SOS generators is described, and prospects for their further development are discussed. Examples are given of using SOS generators in various pulsed power applications such as electron accelerators, X-ray pulse devices, high-power microwave electronics, pumping of gas lasers, and ignition of electrical discharges.