Abstract
Novel MoSX/ZnIn2S4 photocatalysts were fabricated by a facile sonochemical deposition route with (NH4)2MoS4 as a precursor. The 3.0 wt% MoSX/ZnIn2S4 has been shown to significantly enhance the photocatalytic performance for H2 evolution under visible light (λ ≥ 420 nm), which is 26 times higher than that of pristine ZnIn2S4. Various characterizations and further experimental results indicate that an intimate junction formed between MoSX and ZnIn2S4 via sonochemical route and the MoSX not only can promote the transfer of photo-generated electron, but also provides abundant coordinately unsaturated S atoms as active sites for H2 evolution. This study paves a new way to design efficient semiconductor composites for photocatalytic H2 evolution.
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