Abstract
Thermally stimulated current (TSC) spectra were obtained from thin film transistors (TFTs) where the semiconductor film is polycrystalline CdSe. The TSC peaks obtained are identified with the different groups of electron traps present in the TFT. An aging mechanism was detected which is caused by the application of a negative voltage to the gate electrode of the TFT. Aging results in a diminution of the density of traps within the bulk of the CdSe crystallites, an increase in the density of traps at the grain boundaries in the semiconductor film and an increase in the density of traps at the interface between the insulator and the semiconductor films.
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