Abstract
We have used Rutherford backscattering and electrical measurements to asses the efficiency of pyrolytically deposited Si 3N 4 as an encapsulant for ion-implanted GaAs. Outdiffusion of gallium and arsenic into the Si 3N 4 layers occurred in all cases, the quantity being dependent on the source of GaAs. However, we conclude that Si 3N 4 layers afford better protection than did the SiO 2 coatings that we previously investigated.
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