Abstract
In this work the influence of the surface layers (amorphous, polycrystalline) on single-crystalline Si substrates upon the form and frequency dependence of the C-U characteristics is experimentally investigated. Measurements have been made with Al–Si3N4–Si structures in which Si3N4, thin layers have been prepared by reactive cathodic sputtering in nitrogen. The breakdown voltage of Si3N4 layers has been found in the region (2–7)×106 V/cm, with a dielectric constant of 6–7 and a refraction index of 2.
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