Abstract
In this work the influence of the surface layers (amorphous, polycrystalline) on single-crystalline Si substrates upon the form and frequency dependence of the C-U characteristics is experimentally investigated. Measurements have been made with Al–Si3N4–Si structures in which Si3N4, thin layers have been prepared by reactive cathodic sputtering in nitrogen. The breakdown voltage of Si3N4 layers has been found in the region (2–7)×106 V/cm, with a dielectric constant of 6–7 and a refraction index of 2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
