Abstract
Experimental results for S-doped InP are used to show how the basic kinetic model of Wood and Joyce [J. Appl. Phys. 49 (1978) 4854] provides information on the dopant incorporation and desorption mechanisms. The effects of the incident dopant flux, the growth rate and the flux of the group V element are discussed. The calculated enthalpies of equilibrium desorption reactions of chalcogens in both InP and GaAs are shown to agree with the observed activation energies of desorption.
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