Abstract
Experimental thin film AuCdSAl diodes have been fabricated utilizing vacuum evaporation techniques. On the basis of the Crowell and Sze theory, the AuCdS barrier height has been determined from temperature-dependence measurements of the I– V characteristics and voltage-dependence measurements of the barrier capacitance. The estimated value, about 0·67 V, has been confirmed by photoresponse measurements made for comparison. It is shown that the barrier formed by deposition of polycrystalline CdS on Au can be described under the assumptions of the basic diffusion theory.
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